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HIGH-RESOLUTION DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES - PRELIMINARY-RESULTS
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UNSPECIFIED (1992) HIGH-RESOLUTION DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES - PRELIMINARY-RESULTS. In: 38TH NATIONAL SYMP OF THE AMERICAN VACUUM SOC, SEATTLE, WA, NOV 11-15, 1991. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 10 (4 Part 3). pp. 2897-2901. ISSN 0734-2101.
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Abstract
The fabrication of semiconductor multilayer structures is becoming increasingly important. In this paper we shall outline an attempt to study such a sample in depth using the combination of O-16(2)+ ion beam bevel etching and imaging x-ray photoelectron spectroscopy (XPS) with the objective of establishing the method and examining the surface chemistry of Si:Ge material under the conditions obtained in secondary ion mass spectrometry (SIMS) analysis. The advantages and disadvantages of the method as applied to Si/Si0.75Ge0.25 structures will be discussed.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0734-2101 | ||||
Official Date: | July 1992 | ||||
Dates: |
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Volume: | 10 | ||||
Number: | 4 Part 3 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 2897-2901 | ||||
Publication Status: | Published | ||||
Title of Event: | 38TH NATIONAL SYMP OF THE AMERICAN VACUUM SOC | ||||
Location of Event: | SEATTLE, WA | ||||
Date(s) of Event: | NOV 11-15, 1991 |
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