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X-RAY-DIFFRACTION AND REFLECTIVITY CHARACTERIZATION OF SIGE SUPERLATTICE STRUCTURES
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UNSPECIFIED (1992) X-RAY-DIFFRACTION AND REFLECTIVITY CHARACTERIZATION OF SIGE SUPERLATTICE STRUCTURES. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 7 (5). pp. 627-631. ISSN 0268-1242.
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Abstract
In this work we demonstrate the effectiveness of both x-ray diffraction and x-ray reflectivity in the structural characterization of semiconductor structures. By combining information from both techniques the abruptness of the interfaces for Si1-xGex structures, with x = 0.1-0.57, may be determined. For superlattice structures with x < 0.3 both types of interface were found to have a root mean square (Rms) roughness of 0.5 +/- 0.3 nm. For a Si/Si0.45Ge0.55 superlattice structure the interfaces are found to have differing roughnesses. For the SiGe-on-Si interface the Rms roughness is found to be 0.5 +/- 0.2 nm; however, the Si-on-SiGe interface has a larger value of roughness, 1.0 +/- 0.3 nm. This roughness at the Si-on-SiGe interface is found to be dependent on the Ge content of the layer and it is shown by transmission electron microscopy analysis to be long ranged (about 70 nm) and wavy at the interface.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | May 1992 | ||||
Dates: |
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Volume: | 7 | ||||
Number: | 5 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 627-631 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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