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SILICON BORON DELTA DOPED FET - GROWTH AND FABRICATION
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UNSPECIFIED (1992) SILICON BORON DELTA DOPED FET - GROWTH AND FABRICATION. ELECTRONICS LETTERS, 28 (7). pp. 667-669. ISSN 0013-5194.
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Abstract
The fabrication of the first boron delta doped field-effect transistor is described. Molecular beam epitaxy was used to grow the delta doped layers and a low temperature processing schedule has been adopted, including the use of a plasma enhanced oxide growth to form the gate dielectric.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | ELECTRONICS LETTERS | ||||
Publisher: | IEE-INST ELEC ENG | ||||
ISSN: | 0013-5194 | ||||
Official Date: | 26 March 1992 | ||||
Dates: |
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Volume: | 28 | ||||
Number: | 7 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 667-669 | ||||
Publication Status: | Published |
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