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SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILING OF BORON, ANTIMONY, AND GERMANIUM DELTAS IN SILICON AND IMPLICATIONS FOR PROFILE DECONVOLUTION
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UNSPECIFIED (1992) SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILING OF BORON, ANTIMONY, AND GERMANIUM DELTAS IN SILICON AND IMPLICATIONS FOR PROFILE DECONVOLUTION. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 10 (1). pp. 336-341. ISSN 1071-1023.
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Abstract
This article describes the shape of secondary ion mass spectrometry (SIMS) depth profiles from ultra thin "delta-layers" in silicon, and its dependence on the impurity species and the primary beam energy. The impurities studied are boron, antimony, and germanium in epitaxial layers grown by molecular beam epitaxy. The use of the data for the assessment of depth resolution and the quantification or synthesis of SIMS profiles from thicker layers and distributions is discussed. Possible limits to deconvolution are explored.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology Q Science > QC Physics |
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Journal or Publication Title: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 1071-1023 | ||||
Official Date: | January 1992 | ||||
Dates: |
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Volume: | 10 | ||||
Number: | 1 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 336-341 | ||||
Publication Status: | Published |
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