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AN INVESTIGATION OF THE DIFFUSION OF SILICON IN DELTA-DOPED GALLIUM-ARSENIDE, AS DETERMINED USING HIGH-RESOLUTION SECONDARY ION MASS-SPECTROMETRY
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UNSPECIFIED (1991) AN INVESTIGATION OF THE DIFFUSION OF SILICON IN DELTA-DOPED GALLIUM-ARSENIDE, AS DETERMINED USING HIGH-RESOLUTION SECONDARY ION MASS-SPECTROMETRY. JOURNAL OF APPLIED PHYSICS, 70 (2). pp. 821-826. ISSN 0021-8979.
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Abstract
Silicon delta-doped samples of various densities were grown by molecular-beam epitaxy and analyzed using high-resolution secondary ion mass spectrometry. A marked difference was observed between profiles produced from samples doped below a surface density of 1.3 x 10(13) cm-2, where all the silicon was incorporated on gallium sites, and highly doped samples, where autocompensation had occurred. All samples were grown at nominally 580-degrees-C and all the doped planes showed some degree of broadening. A computer model of a two-step diffusion process was developed which produced a set of diffusion coefficients for the lower-doped samples. The diffusion coefficient associated with the post deposition growth for these low-doped samples was approximately 4.2 X 10(-17) cm2 s-1. The more highly doped samples, because of their complicated profiles, were modeled using a graphical technique. This technique revealed the presence of a much larger diffusion coefficient, which is tentatively assigned to silicon diffusing as nearest-neighbor pairs.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 15 July 1991 | ||||
Dates: |
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Volume: | 70 | ||||
Number: | 2 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 821-826 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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