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ELEMENTAL BORON AND ANTIMONY DOPING OF MBE SI AND SIGE STRUCTURES GROWN AT TEMPERATURES BELOW 600-DEGREES-C
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UNSPECIFIED (1991) ELEMENTAL BORON AND ANTIMONY DOPING OF MBE SI AND SIGE STRUCTURES GROWN AT TEMPERATURES BELOW 600-DEGREES-C. In: 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY, UNIV CALIF SAN DIEGO, LA JOLLA, CA, AUG 27-31, 1990. Published in: JOURNAL OF CRYSTAL GROWTH, 111 (1-4). pp. 907-911. ISSN 0022-0248.
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Abstract
This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures incorporating in an active state at concentrations up to 10%. B delta layers of 1 nm or less have also been grown. Sb is also shown to be capable of providing delta doped layers less than 2 nm wide. The B delta layers have been incorporated into modulation doped structures yielding an order of magnitude increase in mobility at 77 K.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | May 1991 | ||||
Dates: |
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Volume: | 111 | ||||
Number: | 1-4 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 907-911 | ||||
Publication Status: | Published | ||||
Title of Event: | 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY | ||||
Location of Event: | UNIV CALIF SAN DIEGO, LA JOLLA, CA | ||||
Date(s) of Event: | AUG 27-31, 1990 |
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