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STRENGTH DEGRADATION OF GROUND AND ETCHED SI SURFACES
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UNSPECIFIED (1990) STRENGTH DEGRADATION OF GROUND AND ETCHED SI SURFACES. INSTITUTE OF PHYSICS CONFERENCE SERIES (111). pp. 493-495. ISSN 0951-3248.
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Abstract
The design of a three point bending test machine for assessing the strength of small specimens is outined. Preliminary results are reported of the strength of sawn and ground silicon as a function of the surface depth removed by etching.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | INSTITUTE OF PHYSICS CONFERENCE SERIES | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0951-3248 | ||||
Official Date: | 1990 | ||||
Dates: |
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Number: | 111 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 493-495 | ||||
Publication Status: | Published |
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