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EFFECT OF THE LANDAU-LEVEL BROADENING ON THE QUANTUM HALL CONDUCTANCE
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UNSPECIFIED (1991) EFFECT OF THE LANDAU-LEVEL BROADENING ON THE QUANTUM HALL CONDUCTANCE. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 13 (1). pp. 99-104. ISSN 0392-6737.
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Abstract
In a previous paper, Kliros et al. presented a model calculation of the Hall conductivity as a function of the Landau level broadening GAMMA for finite temperatures. In this paper, the effect of Landau-level broadening on the structure of the Hall conductivity is investigated. The experimental data regarding the Si-MOSFET and GaAs-heterostructure experiments are reproduced including a functional dependence of GAMMA on the magnetic field. The influence of the effective g-factor is considered as well.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | ||||
Publisher: | EDITRICE COMPOSITORI BOLOGNA | ||||
ISSN: | 0392-6737 | ||||
Official Date: | January 1991 | ||||
Dates: |
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Volume: | 13 | ||||
Number: | 1 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 99-104 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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