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PARA-TYPE DELTA-DOPED LAYERS IN SILICON - STRUCTURAL AND ELECTRONIC-PROPERTIES
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UNSPECIFIED (1990) PARA-TYPE DELTA-DOPED LAYERS IN SILICON - STRUCTURAL AND ELECTRONIC-PROPERTIES. APPLIED PHYSICS LETTERS, 57 (16). pp. 1648-1650. ISSN 0003-6951.
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Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | APPLIED PHYSICS LETTERS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 15 October 1990 | ||||
Dates: |
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Volume: | 57 | ||||
Number: | 16 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 1648-1650 | ||||
Publication Status: | Published |
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