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QUANTITATIVE-ANALYSIS OF ARSENIC-IMPLANTED LAYERS IN SILICON BY SYNCHROTRON-RADIATION-EXCITED X-RAY-FLUORESCENCE
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UNSPECIFIED (1985) QUANTITATIVE-ANALYSIS OF ARSENIC-IMPLANTED LAYERS IN SILICON BY SYNCHROTRON-RADIATION-EXCITED X-RAY-FLUORESCENCE. JOURNAL OF APPLIED PHYSICS, 58 (1). pp. 260-263. ISSN 0021-8979.
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Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 1985 | ||||
Dates: |
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Volume: | 58 | ||||
Number: | 1 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 260-263 | ||||
Publication Status: | Published |
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