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Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
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Buckle, L., Coomber, S. D., Ashley, Tim, Jefferson, Paul Harvey, Walker, David, Veal, T. D., McConville, C. F. and Thomas, Pam A. (2009) Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. Microelectronics Journal, Vol.40 (No.3 Sp. Iss. SI). pp. 399-402. doi:10.1016/j.mejo.2008.06.007
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Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.007
Abstract
The addition of small amounts of nitrogen to III-V semiconductors leads to a large degree of band gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The incorporation of active nitrogen has been previously demonstrated for InNxSb1-x (x <= 0.7%) and GaNxSb1-x (x <= 1.75%) material; however, the as-grown carrier concentrations precluded incorporation into a device structure. Here we report the reduction in the as-grown carrier concentration in InNSb by annealing, whilst retaining the active nitrogen content. FTIR absorption measurements show the first direct experimental evidence of narrowing of the InSb bandgap due to nitrogen incorporation. As an alternative route to defect reduction and device compatible material we report on the growth of Ga1-yInyNxSb1-x, with 0 <= y <= 30% and x = 1.6 +/- 0.2% and demonstrate near lattice matching of the material to GaSb. (C) 2008 Elsevier Ltd. All rights reserved.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Nitrides, Indium antimonide crystals, Nitrogen | ||||
| Journal or Publication Title: | Microelectronics Journal | ||||
| Publisher: | Elsevier Science BV | ||||
| ISSN: | 0026-2692 | ||||
| Official Date: | March 2009 | ||||
| Dates: |
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| Volume: | Vol.40 | ||||
| Number: | No.3 Sp. Iss. SI | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 399-402 | ||||
| DOI: | 10.1016/j.mejo.2008.06.007 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | Great Britain. Ministry of Defence. Electro-Magnetic Remote Sensing Defence Technology Centre (EMRS DTC) | ||||
| Version or Related Resource: | Paper presented at: Workshop on Recent Advances on Low Dimensional Structures and Devices, Univ Nottingham, Nottingham, UK, April 07-09 2008 | ||||
| Conference Paper Type: | Paper | ||||
| Type of Event: | Workshop |
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