Bryant, Angus T., Lu, Liqing, Santi, Enrico, Palmer, Patrick R. and Hudgins, Jerry L. (2008) Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part I : Device model. IEEE Transactions on Power Electronics, Vol.23 (No.1). pp. 189-197. doi:10.1109/TPEL.2007.911823 ISSN 0885-8993.

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Abstract

This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II.

Item Type:	Journal Article
Subjects:	Q Science > QA Mathematics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH):	Power semiconductors -- Mathematical models, PIN diodes -- Mathematical models, Fourier series
Journal or Publication Title:	IEEE Transactions on Power Electronics
Publisher:	IEEE
ISSN:	0885-8993
Official Date:	January 2008
Dates:	Date Event January 2008 Published
Volume:	Vol.23
Number:	No.1
Number of Pages:	9
Page Range:	pp. 189-197
DOI:	10.1109/TPEL.2007.911823
Status:	Not Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	United States. Office of Naval Research, University of Cambridge. Schiff Foundation
Grant number:	N00014-00-1-0131 (ONR)

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