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Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part II : Parameter extraction

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Lu, Liqing, Bryant, Angus T., Santi, E. (Enrico), Palmer, Patrick R. and Hudgins, Jerry L. (2008) Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part II : Parameter extraction. IEEE Transactions on Power Electronics, Vol.23 (No.1). pp. 198-205. doi:10.1109/TPEL.2007.911825 ISSN 0885-8993.

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Official URL: http://dx.doi.org/10.1109/TPEL.2007.911825

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Abstract

In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Semiconductors -- Mathematical models, PIN diodes -- Mathematical models, Finite element method, Parameter estimation
Journal or Publication Title: IEEE Transactions on Power Electronics
Publisher: IEEE
ISSN: 0885-8993
Official Date: January 2008
Dates:
DateEvent
January 2008Published
Volume: Vol.23
Number: No.1
Number of Pages: 8
Page Range: pp. 198-205
DOI: 10.1109/TPEL.2007.911825
Status: Not Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: United States. Office of Naval Research, University of Cambridge. Schiff Foundation
Grant number: N00014-00-1-0131 (ONR)

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