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Valence-band structure of InN from x-ray photoemission spectroscopy
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UNSPECIFIED (2005) Valence-band structure of InN from x-ray photoemission spectroscopy. PHYSICAL REVIEW B, 72 (24). -. doi:10.1103/PhysRevB.72.245319 ISSN 1098-0121.
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Official URL: http://dx.doi.org/10.1103/PhysRevB.72.245319
Abstract
The valence-band structure of clean, high-quality, single-crystalline wurtzite InN thin films prepared with atomic hydrogen is investigated using x-ray photoemission spectroscopy. The In4d(5/2) semicore level due to the In-N bond is found to lie 16.0 +/- 0.1 eV above the valence band maximum. Experimental valence-band spectra are compared with theoretical calculations of the valence-band density of states (VB-DOS), employing density functional theory within the local density approximation with quasiparticle and self-interaction corrections. Agreement between the experimental valence band spectrum and the theoretical VB-DOS is obtained.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMERICAN PHYSICAL SOC | ||||
ISSN: | 1098-0121 | ||||
Official Date: | December 2005 | ||||
Dates: |
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Volume: | 72 | ||||
Number: | 24 | ||||
Number of Pages: | 5 | ||||
Page Range: | - | ||||
DOI: | 10.1103/PhysRevB.72.245319 | ||||
Publication Status: | Published |
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