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InN{0001} polarity by ion scattering spectroscopy
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UNSPECIFIED (2005) InN{0001} polarity by ion scattering spectroscopy. In: International Workshop on Nitrides Semiconductors (IWN 2004), Pittsburgh, PA, JUL 19-23, 2004. Published in: Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2 (7). pp. 2301-2304. ISBN *************. doi:10.1002/pssc.200461290 ISSN 1610-1634.
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Official URL: http://dx.doi.org/10.1002/pssc.200461290
Abstract
The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He+ ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He+ ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (0001)-polarity domains indicated that the InN film is approximately 75 % In-polarity and 25 % N-polarity. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Series Name: | PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS | ||||
Journal or Publication Title: | Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | ||||
Publisher: | WILEY-V C H VERLAG GMBH | ||||
ISBN: | ************* | ||||
ISSN: | 1610-1634 | ||||
Editor: | Stutzmann, M | ||||
Official Date: | 2005 | ||||
Dates: |
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Volume: | 2 | ||||
Number: | 7 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 2301-2304 | ||||
DOI: | 10.1002/pssc.200461290 | ||||
Publication Status: | Published | ||||
Title of Event: | International Workshop on Nitrides Semiconductors (IWN 2004) | ||||
Location of Event: | Pittsburgh, PA | ||||
Date(s) of Event: | JUL 19-23, 2004 |
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