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Impact ionization in strained Si devices
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UNSPECIFIED (2005) Impact ionization in strained Si devices. JOURNAL OF APPLIED PHYSICS, 98 (10). -. doi:10.1063/1.2136210 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.2136210
Abstract
Impact ionization in biaxial tensile strained Si n and p metal-oxide-semiconductor field-effect transistors is investigated. Despite the smaller band gap and higher carrier mobility in strained Si, no evidence for significantly increased impact ionization is found. This is attributed to the reduced density of states in strained Si, brought about by strain-induced band splitting, limiting the opportunities for scattering. (c) 2005 American Institute of Physics.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 15 November 2005 | ||||
Dates: |
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Volume: | 98 | ||||
Number: | 10 | ||||
Number of Pages: | 4 | ||||
Page Range: | - | ||||
DOI: | 10.1063/1.2136210 | ||||
Publication Status: | Published |
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