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Impact ionisation in strained SiGe pMOSFETs
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UNSPECIFIED (2005) Impact ionisation in strained SiGe pMOSFETs. ELECTRONICS LETTERS, 41 (16). pp. 925-927. doi:10.1049/el:20052074 ISSN 0013-5194.
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Official URL: http://dx.doi.org/10.1049/el:20052074
Abstract
Impact ionisation in compressively strained Si0.64Ge0.36 pMOSFETs is investigated. Despite the smaller bandgap and higher hole mobility, impact ionisation is found to be reduced in strained SiGe. This is attributed to the reduced density of states in strained SiGe, brought about by strain-induced band splitting, limiting the opportunities for scattering.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | ELECTRONICS LETTERS | ||||
Publisher: | IEE-INST ELEC ENG | ||||
ISSN: | 0013-5194 | ||||
Official Date: | 4 August 2005 | ||||
Dates: |
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Volume: | 41 | ||||
Number: | 16 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 925-927 | ||||
DOI: | 10.1049/el:20052074 | ||||
Publication Status: | Published |
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