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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
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UNSPECIFIED (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. APPLIED PHYSICS LETTERS, 87 (18). -. doi:10.1063/1.2126117 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2126117
Abstract
Photoluminescence (PL) has been observed from dilute InNxAs1-x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5x5) k center dot p Hamiltonian. (C) 2005 American Institute of Physics.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | APPLIED PHYSICS LETTERS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 31 October 2005 | ||||
Dates: |
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Volume: | 87 | ||||
Number: | 18 | ||||
Number of Pages: | 3 | ||||
Page Range: | - | ||||
DOI: | 10.1063/1.2126117 | ||||
Publication Status: | Published |
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