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Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
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Lever, L., Hu, Youfang, Myronov, Maksym, Liu, Xianping, Owens, N. (Nathan), Gardes, F. Y., Marko, I. P., Sweeney, S. J., Ikonić, Z., Leadley, D. R. (David R.), Reed, G. T. and Kelsall, Robert W. (2011) Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon. Optics Letters, Vol.36 (No.21). pp. 4158-4160. doi:10.1364/OL.36.004158 ISSN 0146-9592.
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Official URL: http://dx.doi.org/10.1364/OL.36.004158
Abstract
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290–1315 nm.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Library of Congress Subject Headings (LCSH): | Alloys, Adsorption, Heterostructures, Silicon, Germanium | ||||
Journal or Publication Title: | Optics Letters | ||||
Publisher: | Optical Society of America | ||||
ISSN: | 0146-9592 | ||||
Official Date: | 19 October 2011 | ||||
Dates: |
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Volume: | Vol.36 | ||||
Number: | No.21 | ||||
Page Range: | pp. 4158-4160 | ||||
DOI: | 10.1364/OL.36.004158 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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