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Study of overheating effects in SiGe-based p-type heterostructures : methods of the hole temperature determination
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Berkutov, I. B., Andrievskii, V. V., Komnik, Y. F. and Mironov, O. A. (2011) Study of overheating effects in SiGe-based p-type heterostructures : methods of the hole temperature determination. Materialwissenschaft und Werkstofftechnik, Volume 42 (Number 1). pp. 15-18. doi:10.1002/mawe.201100722 ISSN 0933-5137.
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Official URL: http://dx.doi.org/10.1002/mawe.201100722
Abstract
The effect of charge carrier overheating is studied in the p-type Si/Si(0.87)Ge(0.13)/Si heterostructure. The hole temperature T(h) can be calculated using three different methods: From a comparison of the changes in the amplitude of the Shubnikov-de Haas oscillations under the influences of temperature and current, from a comparison of the change of phase relaxation time in the weak localization effect obtained at different temperatures and minimum current and at a given temperature but at different values of current, and from a comparison of the temperature and current dependence of the sample resistance. The temperature dependences values of T(h) obtained using three different methods were identical and exhibit transition of the two-dimensional system under study from the regime of "partial inelasticity" to that of small angle scattering at temperature lowering.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Quantum wells, Electron-phonon interactions, Heterostructures -- Effect of temperature on | ||||
Journal or Publication Title: | Materialwissenschaft und Werkstofftechnik | ||||
Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||
ISSN: | 0933-5137 | ||||
Official Date: | January 2011 | ||||
Dates: |
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Volume: | Volume 42 | ||||
Number: | Number 1 | ||||
Page Range: | pp. 15-18 | ||||
DOI: | 10.1002/mawe.201100722 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Data sourced from Thomson Reuters' Web of Knowledge
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