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Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET
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Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. doi:10.1016/j.mee.2011.06.015 ISSN 0167-9317.
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Official URL: http://dx.doi.org/10.1016/j.mee.2011.06.015
Abstract
In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; Implanted N(+) GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (R(sh)) and contact resistance (R(c)) have been investigated in the temperature (T) range of 25-250 degrees C. It was found that the R(sh) (850/700 Omega square) (25/250 degrees C) and R(c) (2.2/0.7 Omega mm) decrease with T for Implanted N(+) GaN contact and R(sh) (400/850 Omega square) and R(c) (0.2/0.4 Omega mm) (weakly for R(c)) increase with T for HJ AlGaN/GaN contact. Numerical computation based models are used to determine the theoretical R(sh) and R(c) behavior with T and to fit the experimental values. (C) 2011 Elsevier B.V. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Microelectronic Engineering | ||||
Publisher: | Elsevier BV | ||||
ISSN: | 0167-9317 | ||||
Official Date: | 2011 | ||||
Dates: |
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Volume: | Vol.88 | ||||
Number: | No.10 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 3140-3144 | ||||
DOI: | 10.1016/j.mee.2011.06.015 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Spanish MICyN | ||||
Grant number: | TEC2008-05577/TEC (Spanish MICyN) |
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