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A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter
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Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H. and O'Neill, Anthony G. (2009) A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, U.S.A., Dec 9-11, 2009. Published in: 2009 International Semiconductor Device Research Symposium (ISDRS 2009) pp. 1-2. doi:10.1109/ISDRS.2009.5378304
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Official URL: http://dx.doi.org/10.1109/ISDRS.2009.5378304
Item Type: | Conference Item (Other) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | 2009 International Semiconductor Device Research Symposium (ISDRS 2009) | ||||
Publisher: | IEEE | ||||
Book Title: | 2009 International Semiconductor Device Research Symposium | ||||
Official Date: | 2009 | ||||
Dates: |
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Page Range: | pp. 1-2 | ||||
DOI: | 10.1109/ISDRS.2009.5378304 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Other | ||||
Title of Event: | International Semiconductor Device Research Symposium (ISDRS) | ||||
Type of Event: | Other | ||||
Location of Event: | College Park, Maryland, U.S.A. | ||||
Date(s) of Event: | Dec 9-11, 2009 |
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