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Physics-based model of planar-gate IGBT Including MOS side two-dimensional effects
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Lu, Liqing, Bryant, Angus T., Hudgins, Jerry L., Palmer, Patrick R. and Santi, Enrico (2010) Physics-based model of planar-gate IGBT Including MOS side two-dimensional effects. IEEE Transactions on Industry Applications, Vol.46 (No.6). pp. 2556-2567. doi:10.1109/TIA.2010.2071190 ISSN 0093-9994.
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Official URL: http://dx.doi.org/10.1109/TIA.2010.2071190
Abstract
An existing physics-based insulated gate bipolar transistor (IGBT) model, which has been proven accurate for both inductive turn-off and inductive turn-on simulations, is modified to account for planar-gate IGBT 2-D effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | IEEE Transactions on Industry Applications | ||||
Publisher: | IEEE | ||||
ISSN: | 0093-9994 | ||||
Official Date: | November 2010 | ||||
Dates: |
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Volume: | Vol.46 | ||||
Number: | No.6 | ||||
Number of Pages: | 12 | ||||
Page Range: | pp. 2556-2567 | ||||
DOI: | 10.1109/TIA.2010.2071190 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Title of Event: | 41st Annual Meeting of the IEEE Industry Applications Society | ||||
Location of Event: | Tampa, FL | ||||
Date(s) of Event: | October 08-12, 2006 |
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