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Ohmic contacts to n-type germanium with low specific contact resistivity
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Gallacher, Kevin, Velha, P., Paul, Douglas J. (Professor of Semiconductor Devices) , MacLaren, I., Myronov, Maksym and Leadley, D. R. (David R.) (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, Vol.100 (No.2). 022113. doi:10.1063/1.3676667 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.3676667
Abstract
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) × 10−7 Ω-cm2 for anneal temperatures of 340 °C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 9 January 2012 | ||||
Dates: |
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Volume: | Vol.100 | ||||
Number: | No.2 | ||||
Number of Pages: | 3 | ||||
Page Range: | 022113 | ||||
DOI: | 10.1063/1.3676667 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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