The Library
Raman study of stress effect on Ge nanocrystals embedded in Al2O3
Tools
Pinto, S.R.C., Rolo, A.G., Chahboun, A., Kashtiban, Reza J., Bangert, U. and Gomes, M.J.M. (2010) Raman study of stress effect on Ge nanocrystals embedded in Al2O3. Thin Solid Films, Vol. 518 (No. 19). pp. 5378-5381. doi:10.1016/j.tsf.2010.03.035 ISSN 00406090.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1016/j.tsf.2010.03.035
Abstract
Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Thin Solid Films | ||||
Publisher: | Elsevier Science BV | ||||
ISSN: | 00406090 | ||||
Official Date: | 2010 | ||||
Dates: |
|
||||
Volume: | Vol. 518 | ||||
Number: | No. 19 | ||||
Page Range: | pp. 5378-5381 | ||||
DOI: | 10.1016/j.tsf.2010.03.035 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |