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Ultra-high temperature (>300 °C) suspended thermodiode in SOI CMOS technology
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Santra, Sumita, Udrea, Florin, Guha, Prasanta K., Ali, Syed Z. and Haneef, I. (2010) Ultra-high temperature (>300 °C) suspended thermodiode in SOI CMOS technology. Microelectronics Journal, Vol.41 (No.9). pp. 540-546. doi:10.1016/j.mejo.2009.12.005 ISSN 0026-2692.
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Official URL: http://dx.doi.org/10.1016/j.mejo.2009.12.005
Abstract
This paper reports for the first time on the performance and long-term stability of a silicon on insulator (SOI) thermodiode with tungsten metallization. suspended on a dielectric membrane, at temperatures beyond 300 degrees C. The thermodiode has been designed and fabricated with minute saturation currents (due to both small size and the use of SOI technology) to allow an ultra-high temperature range and minimal non-linearity. It was found that the thermodiode forward voltage drop versus temperature plot remains linear up to 500 degrees C, with a non-linearity error of less than 7% Extensive experimental results on performance of the thermodiode that was fabricated using a Complementary Metal Oxide Semiconductor (CMOS) SOI process are presented. These results are backed up by infrared measurements and a range of 2-D (dimension) and 3-D simulations using ISE and ANSYS software. The on-chip drive electronics for the thermodiode and the micro-heater, as well as the sensor transducing circuit were placed adjacent to the membrane We demonstrate that the thermodiode is considerably more reliable in long-term direct current operation at high temperatures when compared to the more classical resistive temperature detectors (RTDs) using CMOS metallization layers (tungsten or aluminum). We also compare a membrane thermodiode with a reference thermodiode placed on the silicon substrate and assess their relative performance at elevated temperatures. The experimental results from this comparison confirm that the thermodiode suffers minimal plezo-junction/piezo-resistive effects. (C) 2009 Elsevier Ltd. All rights reserved
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Microelectronics Journal | ||||
Publisher: | Elsevier Science BV | ||||
ISSN: | 0026-2692 | ||||
Official Date: | September 2010 | ||||
Dates: |
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Volume: | Vol.41 | ||||
Number: | No.9 | ||||
Number of Pages: | 7 | ||||
Page Range: | pp. 540-546 | ||||
DOI: | 10.1016/j.mejo.2009.12.005 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC), Higher Education Commission of Pakistan | ||||
Grant number: | EP/F004931/1 (EPSRC) |
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