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GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers
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Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. and Ashley, T. (2008) GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers. Applied Physics Letters, Vol. 93 (No. 12). p. 121106. doi:10.1063/1.2990224 ISSN 00036951.
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Official URL: http://dx.doi.org/10.1063/1.2990224
Abstract
Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 μm, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with ∼ 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 00036951 | ||||
| Official Date: | 2008 | ||||
| Dates: |
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| Volume: | Vol. 93 | ||||
| Number: | No. 12 | ||||
| Page Range: | p. 121106 | ||||
| DOI: | 10.1063/1.2990224 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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