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Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K
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Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. and Ashley, T. (2009) Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K. Applied Physics Letters, Vol. 94 (No. 9). 091111. doi:10.1063/1.3094879 ISSN 00036951.
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Official URL: http://dx.doi.org/10.1063/1.3094879
Abstract
Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ∼ 3.3 μm at 200 K for the 1.1% structure.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 00036951 | ||||
| Official Date: | 2009 | ||||
| Dates: |
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| Volume: | Vol. 94 | ||||
| Number: | No. 9 | ||||
| Page Range: | 091111 | ||||
| DOI: | 10.1063/1.3094879 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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