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Room temperature ballistic transport in InSb quantum well nanodevices
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Gilbertson, A. M., Kormányos, A., Buckle, P. D., Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A. and Cohen, L. F. (2011) Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters, Vol. 99 (No. 24). p. 242101. doi:10.1063/1.3668107 ISSN 00036951.
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Official URL: http://dx.doi.org/10.1063/1.3668107
Abstract
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 106 A/cm2. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 00036951 | ||||
| Official Date: | 2011 | ||||
| Dates: |
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| Volume: | Vol. 99 | ||||
| Number: | No. 24 | ||||
| Page Range: | p. 242101 | ||||
| DOI: | 10.1063/1.3668107 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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