The Library
High permittivity SrHf[sub 0.5]Ti[sub 0.5]O[sub 3] films grown by pulsed laser deposition
Tools
Yan, L., Suchomel, M. R., Grygiel, C., Niu, H. J., McMitchell, Sean R. C., Bacsa, J., Clark, J. H., Werner, M., Chalker, P. R. and Rosseinsky, M. J. (2009) High permittivity SrHf[sub 0.5]Ti[sub 0.5]O[sub 3] films grown by pulsed laser deposition. Applied Physics Letters, Vol.94 (No.23). Article no. 232903. doi:10.1063/1.3151815 ISSN 0003-6951.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1063/1.3151815
Abstract
High permittivity SrHf0.5Ti0.5O3 films (k = 62.8) have been deposited on (001) Nb–SrTiO3 single crystal conducting substrates by pulsed laser deposition. The SrHf0.5Ti0.5O3 films grow epitaxially with atomically smooth surfaces (root mean square roughness 4.8 Å) and a c-axis orientation parallel to the substrate. The measured band gap of SrHf0.5Ti0.5O3 is 3.47 eV compared with 3.15 eV in SrTiO3. Under an applied electric field of 600 kV/cm, the leakage current density of the SrHf0.5Ti0.5O3 films is 4.63×10−4 A/cm2. These attractive dielectric properties and enhanced band gap values make SrHf0.5Ti0.5O3 a promising candidate for high-k dielectric applications in silicon-based integrated circuits.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 2009 | ||||
Dates: |
|
||||
Volume: | Vol.94 | ||||
Number: | No.23 | ||||
Page Range: | Article no. 232903 | ||||
DOI: | 10.1063/1.3151815 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |