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Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells
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Carrington, P. J., Wagener, M. C., Botha, J. R., Sánchez, Ana M. and Krier, A. (2012) Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. Applied Physics Letters, Vol.101 (No.23). Article no. 231101. doi:10.1063/1.4768942 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4768942
Abstract
GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by ∼6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 2012 | ||||
Dates: |
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Volume: | Vol.101 | ||||
Number: | No.23 | ||||
Page Range: | Article no. 231101 | ||||
DOI: | 10.1063/1.4768942 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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