The Library
Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
Tools
Bothe, K., Falster, R. J. and Murphy, John D. (2012) Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates. Applied Physics Letters, Vol.101 (No.3). Article no.032107. doi:10.1063/1.4737175 ISSN 0003-6951.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1063/1.4737175
Abstract
Room temperature photoluminescence was measured from p-type Czochralski silicon processed to contain oxide precipitates. No detectable luminescence was associated with unstrained oxide precipitates. Strained oxide precipitates gave rise to a broad luminescence peak centred at ∼1600 nm. The intensity of the peak increased with the density of strained precipitates, with band-to-band luminescence being reduced correspondingly. Dislocations and stacking faults around the strained precipitates were found to introduce competing non-radiative recombination centres which reduced the sub-bandgap photoluminescence. A mechanism is proposed for the sub-bandgap luminescence due to strained precipitates in terms of a transition between defect bands.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 2012 | ||||
Dates: |
|
||||
Volume: | Vol.101 | ||||
Number: | No.3 | ||||
Page Range: | Article no.032107 | ||||
DOI: | 10.1063/1.4737175 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |