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Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region
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Nash, G. R. and Ashley, T. (2009) Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region. Applied Physics Letters, Vol.94 (No.21). Article: 213510. doi:10.1063/1.3147207 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.3147207
Abstract
A technique for the reduction in Shockley–Read–Hall recombination in semiconductor diodes, in which areas of the depletion region are removed, is described and preliminary results obtained using AlInSb light-emitting-diodes (LEDs) are presented. Both the electrical and optical characteristics of the devices were significantly improved by removing parts of the depletion region using dry etching, with an average increase in the zero bias differential resistance and LED emission at low currents by a factor of 2.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 25 May 2009 | ||||
| Dates: |
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| Volume: | Vol.94 | ||||
| Number: | No.21 | ||||
| Page Range: | Article: 213510 | ||||
| DOI: | 10.1063/1.3147207 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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