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Physical modelling of 4H-SiC PiN diodes
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Fisher, Craig A., Jennings, M. R., Bryant, Angus T., Pérez-Tomás, Amador, Gammon, P. M., Brosselard, Pierre, Godignon, Phillippe and Mawby, P. A. (Philip A.) (2012) Physical modelling of 4H-SiC PiN diodes. Materials Science Forum, Volume 717-720 . pp. 993-996. doi:10.4028/www.scientific.net/MSF.717-720.993 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.7...
Abstract
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization for power circuit applications. The performance of this model has been compared with both finite element simulations and experimental results; good matching for both switching and conduction characteristics has been observed.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Materials Science Forum | ||||
Publisher: | Trans Tech Publications Ltd. | ||||
ISSN: | 1662-9752 | ||||
Official Date: | 2012 | ||||
Dates: |
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Volume: | Volume 717-720 | ||||
Page Range: | pp. 993-996 | ||||
DOI: | 10.4028/www.scientific.net/MSF.717-720.993 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published |
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