Alexander-Webber, J. A., Baker, A. M. R., Buckle, P. D., Ashley, T. and Nicholas, R. J. (2012) High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb. Physical Review B (Condensed Matter and Materials Physics), Volume 86 (Number 4). Article number 045404. doi:10.1103/PhysRevB.86.045404

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Abstract

We report measurements of the temperature and electric field dependent breakdown of the quantum Hall effect in two-dimensional InSb/AlInSb heterostructures. The electron temperature Te is studied as a function of electric field and it is shown that the energy loss rates of electrons to the lattice follow a (Te3−TL3) dependence for 2 K<Te<22 K at a lattice temperature TL=1.5 K. The high-current induced breakdown of the quantum Hall effect (QHE) is linearly proportional to sample width as deduced from the Hall resistivity and shows breakdown at lower current densities as deduced from the resistivity (ρxx) due to nonuniformity in carrier density. Temperature dependent studies show that the quantum Hall effect persists to considerably higher temperatures than the conventional GaAs/AlGaAs system. Using the energy loss rates, we describe the QHE breakdown in terms of bootstrap-type electron heating.

Item Type:	Journal Article
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Physical Review B (Condensed Matter and Materials Physics)
Publisher:	American Physical Society
ISSN:	1098-0121
Official Date:	2012
Dates:	Date Event 2012 Published
Volume:	Volume 86
Number:	Number 4
Page Range:	Article number 045404
DOI:	10.1103/PhysRevB.86.045404
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)

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