King, P. D. C., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.), Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., Rienks, E. D. L., Jensen, M. Fuglsang and Hofmann, Ph. (2010) Surface band-gap narrowing in quantized electron accumulation layers. Physical Review Letters, Vol.104 (No.25). Article no. 256803. doi:10.1103/PhysRevLett.104.256803 ISSN 0031-9007.

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Abstract

An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Physical Review Letters
Publisher:	American Physical Society
ISSN:	0031-9007
Official Date:	24 June 2010
Dates:	Date Event 24 June 2010 Published
Volume:	Vol.104
Number:	No.25
Number of Pages:	4
Page Range:	Article no. 256803
DOI:	10.1103/PhysRevLett.104.256803
Status:	Peer Reviewed
Publication Status:	Published
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Lundbeck foundation, Danish National Research Council, Spanish government
Grant number:	EP/H012575/1 (EPSRC), MAT2007-66129

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