Ashwin, M. J., Walker, David, Thomas, Pam A., Jones, T. S. and Veal, T. D. (2013) N incorporation in GaInNSb alloys and lattice matching to GaSb. Journal of Applied Physics, Volume 113 (Number 3). Article number 033502. doi:10.1063/1.4775745 ISSN 0021-8979.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Request Changes to record.

Abstract

The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate, followed by a departure from this at low growth rates; a similar behaviour is observed for GaInNSb. Unexpectedly, the point at which there is a departure from this linear behaviour is found to be extended to lower growth rates by the addition of small amounts of In. These results are compared to a kinetic theory-based model from which it is postulated that the change in behaviour can be attributed to an In-induced change in the characteristic surface residence lifetime of the N atoms. In addition, a method is demonstrated for growing GaInNSb lattice-matched to GaSb(001) for compositions with band gaps covering the 2–5 μm region.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Science > Chemistry Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
ISSN:	0021-8979
Official Date:	January 2013
Dates:	Date Event January 2013 Published
Volume:	Volume 113
Number:	Number 3
Page Range:	Article number 033502
DOI:	10.1063/1.4775745
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

Request changes or add full text files to a record

Repository staff actions (login required)

View Item