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N incorporation in GaInNSb alloys and lattice matching to GaSb
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Ashwin, M. J., Walker, David, Thomas, Pam A., Jones, T. S. and Veal, T. D. (2013) N incorporation in GaInNSb alloys and lattice matching to GaSb. Journal of Applied Physics, Volume 113 (Number 3). Article number 033502. doi:10.1063/1.4775745
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Official URL: http://dx.doi.org/10.1063/1.4775745
Abstract
The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate, followed by a departure from this at low growth rates; a similar behaviour is observed for GaInNSb. Unexpectedly, the point at which there is a departure from this linear behaviour is found to be extended to lower growth rates by the addition of small amounts of In. These results are compared to a kinetic theory-based model from which it is postulated that the change in behaviour can be attributed to an In-induced change in the characteristic surface residence lifetime of the N atoms. In addition, a method is demonstrated for growing GaInNSb lattice-matched to GaSb(001) for compositions with band gaps covering the 2–5 μm region.
| Item Type: | Journal Article | ||||
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| Divisions: | Faculty of Science > Chemistry Faculty of Science > Physics |
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| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | January 2013 | ||||
| Dates: |
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| Volume: | Volume 113 | ||||
| Number: | Number 3 | ||||
| Page Range: | Article number 033502 | ||||
| DOI: | 10.1063/1.4775745 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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