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N incorporation in GaInNSb alloys and lattice matching to GaSb

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Ashwin, M. J., Walker, David, Thomas, Pam A., Jones, T. S. and Veal, T. D. (2013) N incorporation in GaInNSb alloys and lattice matching to GaSb. Journal of Applied Physics, Volume 113 (Number 3). Article number 033502. doi:10.1063/1.4775745 ISSN 0021-8979.

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Official URL: http://dx.doi.org/10.1063/1.4775745

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Abstract

The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate, followed by a departure from this at low growth rates; a similar behaviour is observed for GaInNSb. Unexpectedly, the point at which there is a departure from this linear behaviour is found to be extended to lower growth rates by the addition of small amounts of In. These results are compared to a kinetic theory-based model from which it is postulated that the change in behaviour can be attributed to an In-induced change in the characteristic surface residence lifetime of the N atoms. In addition, a method is demonstrated for growing GaInNSb lattice-matched to GaSb(001) for compositions with band gaps covering the 2–5 μm region.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Chemistry
Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Official Date: January 2013
Dates:
DateEvent
January 2013Published
Volume: Volume 113
Number: Number 3
Page Range: Article number 033502
DOI: 10.1063/1.4775745
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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