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Growth and properties of GaSbBi alloys
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Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077
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WRAP_0672965-ch-191115-growth_and_properties_of_gasbbi.pdf - Published Version - Requires a PDF viewer. Download (828Kb) | Preview |
Official URL: http://dx.doi.org/10.1063/1.4824077
Abstract
Molecular-beam epitaxy has been used to grow GaSb 1− x Bi x alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Chemistry | ||||
| Library of Congress Subject Headings (LCSH): | Epitaxy, Bismuth alloys | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | October 2013 | ||||
| Dates: |
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| Volume: | Volume 103 | ||||
| Number: | Number 14 | ||||
| Article Number: | 142106 | ||||
| DOI: | 10.1063/1.4824077 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Funder: | University of Liverpool, Engineering and Physical Sciences Research Council (EPSRC), United States. Department of Energy, University College, London | ||||
| Grant number: | EP/G004447/2 (EPSRC), EP/H021388/1 (EPSRC), DE-AC02-05CH11231 (DoE), EP/K000136/1 (EPSRC), EP/K000144/1 (EPSRC), EP/F067496 |
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