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Growth and properties of GaSbBi alloys

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Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Scanlon, David O., Buckeridge, John, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Growth and properties of GaSbBi alloys. Applied Physics Letters, Volume 103 (Number 14). 142106. doi:10.1063/1.4824077 ISSN 0003-6951.

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Official URL: http://dx.doi.org/10.1063/1.4824077

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Abstract

Molecular-beam epitaxy has been used to grow GaSb 1− x Bi x alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Chemistry
Library of Congress Subject Headings (LCSH): Epitaxy, Bismuth alloys
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: October 2013
Dates:
DateEvent
October 2013Published
Volume: Volume 103
Number: Number 14
Article Number: 142106
DOI: 10.1063/1.4824077
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 26 December 2015
Date of first compliant Open Access: 26 December 2015
Funder: University of Liverpool, Engineering and Physical Sciences Research Council (EPSRC), United States. Department of Energy, University College, London
Grant number: EP/G004447/2 (EPSRC), EP/H021388/1 (EPSRC), DE-AC02-05CH11231 (DoE), EP/K000136/1 (EPSRC), EP/K000144/1 (EPSRC), EP/F067496

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