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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
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Wirths, S., Tiedemann, A. T., Ikonic, Zoran, Harrison, P., Holländer, B., Stoica, T., Mussler, G., Myronov, Maksym, Hartmann, J. M., Grützmacher, D., Buca, D. and Mantl, S. (2013) Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Applied Physics Letters, Volume 102 (Number 19). Number article 192103. doi:10.1063/1.4805034 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4805034
Abstract
In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge 1−xSnx (x > 9%) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 2013 | ||||
Dates: |
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Volume: | Volume 102 | ||||
Number: | Number 19 | ||||
Page Range: | Number article 192103 | ||||
DOI: | 10.1063/1.4805034 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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