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Optical absorption by dilute GaNSb alloys : influence of N pair states
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Mudd, James J., Kybert, Nicholas J., Linhart, W. M., Buckle, L., Ashley, Tim, King, P. D. C., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2013) Optical absorption by dilute GaNSb alloys : influence of N pair states. Applied Physics Letters, Volume 103 (Number 4). Article number 042110. doi:10.1063/1.4816519 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4816519
Abstract
The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry Faculty of Science, Engineering and Medicine > Science > Physics |
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| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 2013 | ||||
| Dates: |
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| Volume: | Volume 103 | ||||
| Number: | Number 4 | ||||
| Article Number: | Article number 042110 | ||||
| DOI: | 10.1063/1.4816519 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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