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Sulfur passivation of surface electrons in highly Mg-doped InN
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Linhart, W. M., Chai, J., McConville, C. F. (Chris F.), Durbin, S. M. and Veal, T. D. (Tim D.) (2013) Sulfur passivation of surface electrons in highly Mg-doped InN. Journal of Applied Physics, Volume 114 (Number 10). Article number 103702. doi:10.1063/1.4820483 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.4820483
Abstract
Electron accumulation with a sheet density greater than 1013 cm−2 usually occurs at InN surfaces. Here, the effects of treatment with ammonium sulfide ( ) on the surface electronic properties of highly Mg-doped ) have been investigated with high resolution x-ray photoemission spectroscopy. The valence band photoemission spectra show that the surface Fermi level decreases by approximately 0.08 eV with treatment, resulting in a decrease of the downward band bending and up to a 70% reduction in the surface electron sheet density.
(NH4)2SxInN (>4×1018 cm−3(NH4)2Sx
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 2013 | ||||
Dates: |
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Volume: | Volume 114 | ||||
Number: | Number 10 | ||||
Page Range: | Article number 103702 | ||||
DOI: | 10.1063/1.4820483 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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