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Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance
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Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, Mohana K., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J., Misiewicz, J. and Veal, T. D. (Tim D.) (2013) Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance. Applied Physics Letters, Volume 103 (Number 26). Article number 261907. doi:10.1063/1.4858967 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4858967
Abstract
GaSb1−xBix layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E0 band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E0 transition in the temperature range 10–270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E0 transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb1−xBix are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb1−xBix alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes).
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 2013 | ||||
| Dates: |
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| Volume: | Volume 103 | ||||
| Number: | Number 26 | ||||
| Page Range: | Article number 261907 | ||||
| DOI: | 10.1063/1.4858967 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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