Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym and Leadley, D. R. (David R.) (2013) Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon pp. 169-172. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523519

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Request Changes to record.

Abstract

We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	14th International Conference on Ultimate Integration on Silicon
Publisher:	IEEE
ISBN:	9781467348003
Book Title:	2013 14th International Conference on Ultimate Integration on Silicon (ULIS)
Official Date:	2013
Dates:	Date Event 2013 Published
Page Range:	pp. 169-172
DOI:	10.1109/ULIS.2013.6523519
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon
Type of Event:	Conference
Location of Event:	Coventry, UK
Date(s) of Event:	19-21 March 2013

Request changes or add full text files to a record

Repository staff actions (login required)

View Item