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An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
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Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.) (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. doi:10.7567/JJAP.53.04EH02
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Official URL: http://dx.doi.org/10.7567/JJAP.53.04EH02
Abstract
An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm2 V−1 s−1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm2 V−1 s−1 and 1.9 × 1011 cm−2, respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III–V and II–VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.
| Item Type: | Journal Article | ||||||||
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| Divisions: | Faculty of Science > Physics | ||||||||
| Journal or Publication Title: | Japanese Journal of Applied Physics | ||||||||
| Publisher: | Japan Society of Applied Physics | ||||||||
| ISSN: | 0021-4922 | ||||||||
| Official Date: | 6 February 2014 | ||||||||
| Dates: |
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| Volume: | Volume 53 | ||||||||
| Number: | Number 4S | ||||||||
| Number of Pages: | 6 | ||||||||
| Article Number: | Article number 04EH02 | ||||||||
| DOI: | 10.7567/JJAP.53.04EH02 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access |
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