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An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

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Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A. and Leadley, D. R. (David R.) (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, Volume 53 (Number 4S). Article number 04EH02. doi:10.7567/JJAP.53.04EH02 ISSN 0021-4922.

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Official URL: http://dx.doi.org/10.7567/JJAP.53.04EH02

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Abstract

An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm2 V−1 s−1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm2 V−1 s−1 and 1.9 × 1011 cm−2, respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III–V and II–VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Japanese Journal of Applied Physics
Publisher: Japan Society of Applied Physics
ISSN: 0021-4922
Official Date: 6 February 2014
Dates:
DateEvent
6 February 2014Published
28 October 2013Accepted
22 September 2013Published
Volume: Volume 53
Number: Number 4S
Number of Pages: 6
Article Number: Article number 04EH02
DOI: 10.7567/JJAP.53.04EH02
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)

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