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Replenish and relax : explaining logarithmic annealing in ion-implanted c-Si
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Béland, Laurent Karim, Anahory, Yonathan, Smeets, Dries, Guihard, Matthieu, Brommer, Peter, Joly, Jean-François, Pothier, Jean-Christophe, Lewis, Laurent J., Mousseau, N. (Normand) and Schiettekatte, François (2013) Replenish and relax : explaining logarithmic annealing in ion-implanted c-Si. Physical Review Letters, Volume 111 . Article number 105502. doi:10.1103/PhysRevLett.111.105502 ISSN 0031-9007.
An open access version can be found in:
Official URL: http://dx.doi.org/10.1103/PhysRevLett.111.105502
Abstract
We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QC Physics | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics Faculty of Science, Engineering and Medicine > Science > Centre for Scientific Computing |
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Journal or Publication Title: | Physical Review Letters | ||||||
Publisher: | American Physical Society | ||||||
ISSN: | 0031-9007 | ||||||
Official Date: | 4 September 2013 | ||||||
Dates: |
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Volume: | Volume 111 | ||||||
Article Number: | Article number 105502 | ||||||
DOI: | 10.1103/PhysRevLett.111.105502 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Open Access Version: |
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