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RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors
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Myronov, Maksym, Rhead, Stephen, Colston, Gerard B. and Leadley, D. R. (David R.) (2014) RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors. In: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 69-70. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874653
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Official URL: http://dx.doi.org/10.1109/ISTDM.2014.6874653
Abstract
We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781479954278 | ||||
Book Title: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
Official Date: | 2014 | ||||
Dates: |
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Page Range: | pp. 69-70 | ||||
DOI: | 10.1109/ISTDM.2014.6874653 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
Type of Event: | Conference | ||||
Location of Event: | Singapore | ||||
Date(s) of Event: | 2-4 Jun 2014 | ||||
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