Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, W. A., Webber, P. J. and Williams, G. M. (2010) High performance InSb QWFETs for low power dissipation millimetre wave applications. In: 2010 European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 27-28 Sep 2010 pp. 158-161. ISBN 9781424472314.

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Abstract

Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of 305 GHz and power gain cut-off frequency (fmax) of 480 GHz at VDS of only 0.5 V. Outline design confirms the potential for a 3 stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
ISBN:	9781424472314
Official Date:	2010
Dates:	Date Event 2010 Published
Page Range:	pp. 158-161
Status:	Not Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	2010 European Microwave Integrated Circuits Conference (EuMIC)
Type of Event:	Conference
Location of Event:	Paris, France
Date(s) of Event:	27-28 Sep 2010
Related URLs:	Organisation

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