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High performance InSb QWFETs for low power dissipation millimetre wave applications
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Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, W. A., Webber, P. J. and Williams, G. M. (2010) High performance InSb QWFETs for low power dissipation millimetre wave applications. In: 2010 European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 27-28 Sep 2010 pp. 158-161. ISBN 9781424472314.
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Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...
Abstract
Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of 305 GHz and power gain cut-off frequency (fmax) of 480 GHz at VDS of only 0.5 V. Outline design confirms the potential for a 3 stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
ISBN: | 9781424472314 | ||||
Official Date: | 2010 | ||||
Dates: |
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Page Range: | pp. 158-161 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 2010 European Microwave Integrated Circuits Conference (EuMIC) | ||||
Type of Event: | Conference | ||||
Location of Event: | Paris, France | ||||
Date(s) of Event: | 27-28 Sep 2010 | ||||
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