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Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices

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Gilbertson, A. M., Fearn, M., Kormányos, A., Read, D. E., Lambert, C. J., Emeny, M. T., Ashley, Tim, Solin, S. A. and Cohen, L. F. (2011) Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices. Physical Review B (Condensed Matter and Materials Physics), Volume 83 (Number 7). Article number 075304. doi:10.1103/PhysRevB.83.075304 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.83.075304

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Abstract

We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1−xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 8 February 2011
Dates:
DateEvent
8 February 2011Published
Volume: Volume 83
Number: Number 7
Article Number: Article number 075304
DOI: 10.1103/PhysRevB.83.075304
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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