Litvinenko, K. L., Leontiadou, M. A., Li, Juerong, Clowes, S. K., Emeny, M. T., Ashley, Tim, Pidgeon, C. R., Cohen, L. F. and Murdin, B. N. (2010) Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs. Applied Physics Letters, Volume 96 (Number 11). Article number 111107. doi:10.1063/1.3337111 ISSN 0003-6951.

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Abstract

Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate (<4 T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D’yakonov–Perel’ dephasing process is suppressed. At the high field limit the Elliot–Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	16 March 2010
Dates:	Date Event 16 March 2010 Published
Volume:	Volume 96
Number:	Number 11
Article Number:	Article number 111107
DOI:	10.1063/1.3337111
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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