Fox, Natasha E., Andreev, A. D., Nash, G. R., Ashley, Tim and Hosea, T. J. C. (2010) Room temperature spectroscopic characterization of mid-infrared GaInSb quantum-well laser structures. Semiconductor Science and Technology, Volume 25 (Number 3). Article number 035005. doi:10.1088/0268-1242/25/3/035005 ISSN 0268-1242.

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Abstract

Three GaInSb/AlGaInSb type I multi-quantum-well (QW) laser structures grown on GaAs, with increasingly strained QWs, aimed at emitting at ~4 µm, are analysed using our Fourier transform infrared surface photo-voltage spectroscopy technique. The measurements clearly yield a full set of transitions including not only the barrier bandgap, but also the QW ground state transition, from which the device operating wavelengths can be inferred, and up to five excited state QW transitions. The full set of measured transition energies are then compared closely with those predicted by an 8-band k sdot p model which gives a generally good agreement for the QW transitions, but an indication that the current literature values for the AlGaInSb bandgap seem to be in considerable error for the present alloy compositions.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title:	Semiconductor Science and Technology
Publisher:	Institute of Physics Publishing Ltd.
ISSN:	0268-1242
Official Date:	29 January 2010
Dates:	Date Event 29 January 2010 Published
Volume:	Volume 25
Number:	Number 3
Article Number:	Article number 035005
DOI:	10.1088/0268-1242/25/3/035005
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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